logo
ShenZhen QingFengYuan Technology Co.,Ltd.
উদ্ধৃতি
বিভাগসমূহ
যোগাযোগ
যোগাযোগ: Miss. Abby
ফ্যাক্স:
এখনই যোগাযোগ করুন
আমাদের মেইল করুন

TRS8A65F,S1Q

পণ্যের বিবরণ

পেমেন্ট ও শিপিংয়ের শর্তাবলী

Description: DIODE SIL CARBIDE 650V 8A TO220F

সেরা দাম পান
বিশেষভাবে তুলে ধরা:
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
40 µA @ 650 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.6 V @ 8 A
Package:
Tube
Series:
-
Capacitance @ Vr, F:
28pF @ 650V, 1MHz
Supplier Device Package:
TO-220F-2L
Reverse Recovery Time (trr):
0 ns
Mfr:
Toshiba Semiconductor and Storage
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
175°C (Max)
Package / Case:
TO-220-2 Full Pack
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
8A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
TRS8A65
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
40 µA @ 650 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.6 V @ 8 A
Package:
Tube
Series:
-
Capacitance @ Vr, F:
28pF @ 650V, 1MHz
Supplier Device Package:
TO-220F-2L
Reverse Recovery Time (trr):
0 ns
Mfr:
Toshiba Semiconductor and Storage
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
175°C (Max)
Package / Case:
TO-220-2 Full Pack
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
8A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
TRS8A65
TRS8A65F,S1Q
Diode 650 V 8A Through Hole TO-220F-2L
অনুরূপ পণ্য